100,639 research outputs found
Generalized BFT Formalism of Electroweak Theory in the Unitary Gauge
Full text linkWe systematically embed the SU(2)U(1) Higgs model in the unitary
gauge into a fully gauge-invariant theory by following the generalized BFT
formalism. We also suggest a novel path to get a first-class Lagrangian
directly from the original second-class one using the BFT fields.Comment: 14 pages, Latex, no figure
The quantization of the chiral Schwinger model based on the BFT-BFV formalism II
Get PDFWe apply an improved version of Batalin-Fradkin-Tyutin (BFT) Hamiltonian
method to the a=1 chiral Schwinger Model, which is much more nontrivial than
the a>1.\delta\xi$ in the measure. As a result, we explicitly
obtain the fully gauge invariant partition function, which includes a new type
of Wess-Zumino (WZ) term irrelevant to the gauge symmetry as well as usual WZ
action.Comment: 17 pages, To be published in J. Phys.
Electronic structures of layered perovskite Sr2MO4 (M=Ru, Rh, and Ir)
Full text linkWe investigated the electronic structures of the two-dimensional layered
perovskite Sr\textit{M}O (\textit{M}=4\textit{d} Ru, 4\textit{d}
Rh, and 5\textit{d} Ir) using optical spectroscopy and polarization-dependent O
1\textit{s} x-ray absorption spectroscopy. While the ground states of the
series of compounds are rather different, their optical conductivity spectra
exhibit similar interband transitions, indicative of the
common electronic structures of the 4\textit{d} and 5\textit{d} layered oxides.
The energy splittings between the two orbitals, ,
and , are about 2 eV, which is much larger
than those in the pseudocubic and 3\textit{d} layered perovskite oxides. The
electronic properties of the Sr\textit{M}O compounds are discussed
in terms of the crystal structure and the extended character of the 4\textit{d}
and 5\textit{d} orbitals
Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges
Full text linkWe investigated the dielectric functions () of Ir, Ru, Pt,
and IrO, which are commonly used as electrodes in ferroelectric thin film
applications. In particular, we investigated the contributions from bound
charges (), since these are important scientifically as
well as technologically: the (0) of a metal electrode is one of
the major factors determining the depolarization field inside a ferroelectric
capacitor. To obtain (0), we measured reflectivity spectra of
sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7
meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and
imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings
to extract (0) values. Ir, Ru, Pt, and IrO produced
experimental (0) values of 4810, 8210, 5810, and
295, respectively, which are in good agreement with values obtained using
first-principles calculations. These values are much higher than those for
noble metals such as Cu, Ag, and Au because transition metals and IrO have
such strong d-d transitions below 2.0 eV. High (0) values will
reduce the depolarization field in ferroelectric capacitors, making these
materials good candidates for use as electrodes in ferroelectric applications.Comment: 26 pages, 6 figures, 2 table
Electron Spin Relaxation under Drift in GaAs
Full text linkBased on a Monte Carlo method, we investigate the influence of transport
conditions on the electron spin relaxation in GaAs. The decay of initial
electron spin polarization is calculated as a function of distance under the
presence of moderate drift fields and/or non-zero injection energies. For
relatively low fields (a couple of kV/cm), a substantial amount of spin
polarization is preserved for several microns at 300 K. However, it is also
found that the spin relaxation rate increases rapidly with the drift field,
scaling as the square of the electron wavevector in the direction of the field.
When the electrons are injected with a high energy, a pronounced decrease is
observed in the spin relaxation length due to an initial increase in the spin
precession frequency. Hence, high-field or high-energy transport conditions may
not be desirable for spin-based devices.Comment: 4 pages, 3 figures, one table. Scheduled for publication in the May
26, 2003 issue of Applied Physics Letters (039321APL
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